| PART |
Description |
Maker |
| MAX889 MAX889RESA MAX889SESA MAX889TESA |
High-Frequency / Regulated / 200mA / Inverting Charge Pump
High-Frequency, Regulated, 200mA, Inverting Charge Pump
|
MAXIM[Maxim Integrated Products]
|
| SP6661 SP6661EN SP6661EU SP6661EU_TR SP6661UEB SP6 |
High Frequency 200mA Charge Pump Inverter or Doubler
|
SIPEX[Sipex Corporation]
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| SC1531ACSTR SC1531CSTR SC1531 SC1531A SC1531ACS.TR |
200 mA & 250 mA smart LDOs
200mA & 500mA SmartLDOs
200mA & 250mA SmartLDOs
250mA SmartLDOs(250mA SmartLDOs线性稳压器)
200mA SmartLDOs(200mA SmartLDOs线性稳压器)
|
SEMTECH[Semtech Corporation]
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| HIP4081A04 HIP4081AIPZ HIP4081A HIP4081AIB HIP4081 |
80V/2.5A Peak, High Frequency Full Bridge FET Driver 2.6 A FULL BRDG BASED MOSFET DRIVER, PDSO20
80V/2.5A Peak, High Frequency Full Bridge FET Driver with Charge Pump and Independent Control Inputs; Temperature Range: -40°C to 85°C; Package: 20-SOIC T&R 2.6 A FULL BRDG BASED MOSFET DRIVER, PDSO20
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| MCP73841 MCP73841-410I_MS MCP73842 MCP73842-410I_M |
The MCP73844 combines high accuracy constant-voltage (0.5% max), constant-current regulation, cell preconditioning, advanced safety timers, automatic charge termination, and charge status indication in a space saving MSOP-8 package. The de
The MCP73843 combines high accuracy constant-voltage (0.5% max), constant-current regulation, cell preconditioning, advanced safety timers, automatic charge termination, and charge status indication in a space saving MSOP-8 package. The de
The MCP73842 combines high accuracy constant-voltage (0.5% max), constant-current regulation, cell preconditioning, cell temperature monitoring, advanced safety timers, automatic charge termination, and charge status indication in a space
The MCP73841 combines high accuracy constant-voltage (0.5% max), constant-current regulation, cell preconditioning, cell temperature monitoring, advanced safety timers, automatic charge termination, and charge status indication in a space
Advanced Single or Dual Cell Lithium-Ion/ Lithium-Polymer Charge Management Controllers 先进的单节或双节锂离锂聚合物充电管理控制
RESONATORS SAW 303.825MHZ SMD 先进的单节或双节锂离锂聚合物充电管理控制
|
MICROCHIP[Microchip Technology]
Microchip Technology Inc.
Microchip Technology, Inc.
|
| ADF4110BRU-REEL ADF4110BRUZ-RL ADF4113BCP-REEL ADF |
Single, Integer-N, 550 MHz PLL With Programmable Prescaler And Charge Pump; Package: TSSOP; No of Pins: 16; Temperature Range: Industrial PLL FREQUENCY SYNTHESIZER, 550 MHz, PDSO16
Single, Integer-N 4.0 GHz PLL With Programmable Prescaler And Charge Pump; Package: LFCSP (4x4mm); No of Pins: 20; Temperature Range: Industrial PLL FREQUENCY SYNTHESIZER, 4000 MHz, CQCC20
Single, Integer-N, 550 MHz PLL With Programmable Prescaler And Charge Pump; Package: LFCSP (4x4mm); No of Pins: 20; Temperature Range: Industrial PLL FREQUENCY SYNTHESIZER, 550 MHz, CQCC20
Single, Integer-N, 1.2 GHz PLL With Programmable Prescaler And Charge Pump; Package: TSSOP; No of Pins: 16; Temperature Range: Industrial PLL FREQUENCY SYNTHESIZER, 1400 MHz, PDSO16
Single, Integer-N 3.0 GHz PPL With Programmable Prescaler And Charge Pump; Package: LFCSP (4x4mm); No of Pins: 20; Temperature Range: Industrial PLL FREQUENCY SYNTHESIZER, 3000 MHz, CQCC20
PLL FREQUENCY SYNTHESIZER, 1400 MHz, CQCC20
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| CMBD4148 CMBD1201 CMBD1202 CMBD1203 CMBD1204 CMBD1 |
0.250W SMD Single Switching Diode , 75.0V Vr, 5.000uA Ir, 1.05V Vf @ 200mA If
0.250W SMD Dual Switching Diode , 75.0V Vr, 5.000uA Ir, 1.05V Vf @ 200mA If
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
|
CDIL[Continental Device India Limited]
|
| 2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| 2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| 2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
